Evidence of defect formation in monolayer MoS2 at ultralow accelerating voltage electron irradiation

Approved

Classifications

MinEdu publication type
A1 Journal article (peer-reviewed)
Definition
Article
Target group
Scientific
Peer reviewed
Peer-reviewed
Article type
Journal article
Host publication type
Journal

Authors of the publication

Number of authors
10
Authors
Dash, Ajit Kumar; Swaminathan, Hariharan; Berger, Ethan; Mondal, Mainak; Lehenkari, Touko; Prasad, Pushp Raj; Watanabe, Kenji; Taniguchi, Takashi; Komsa, Hannu-Pekka; Singh, Akshay

Publication channel information

Title of journal/series
2D materials
ISSN (electronic)
2053-1583
ISSN (linking)
2053-1583
Publisher
Institute of physics publishing
Publication forum ID
80247
Publication forum level
3
Country of publication
United Kingdom
Internationality
Yes

Detailed publication information

Publication year
2023
Bibliographical publication year
2023
Reporting year
2023
Journal/series volume number
10
Journal/series issue number
3
Article number
035002
DOI
10.1088/2053-1583/acc7b6
Language of publication
English

Co-publication information

International co-publication
Yes
Co-publication with a company
No

Availability

Link to self-archived version
https://urn.fi/URN:NBN:fi:oulu-202401021024

Classification and additional information

MinEdu field of science classification
213 Electronic, automation and communications engineering, electronics
Keywords
defects; density functional theory (DFT); electron beam irradiation; machine learning force fields (MLFFs); monolayer MoS 2; optical spectroscopy; scanning electron microscopy

Research data information

Research data information in the publication
All data that support the findings of this study are included within the article (and any supplementary files).

Source database ID

WoS ID
WOS:000969104300001
Scopus ID
2-s2.0-85152959619